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APT7M120B

N-Channel 1200 V 8A (Tc) 335W (Tc) Through Hole TO-247 [B]

Manufacturer:

Microchip Technology
Mfr.Part #:

APT7M120B
Datasheet:

APT7M120B Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

1200 V
Current - Continuous Drain (Id) @ 25°C:

8A (Tc)
EDA/CAD Models:

Request Free CAD Models for APT7M120B

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APT7M120B General Description

Power MOS 7®is a family of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7®combines lower conduction and switching lossesalong with exceptionally fast switching speeds

Key Features

Power Semiconductors, Power Modules and RF Power MOSFETs Catalog
Eliminating Parasitic Oscillation between Parallel MOSFETs
High Frequency Resonant Half Bridge
Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC
Introduction to MOSFETs
Latest Technology PT IGBTs vs. Power MOSFETs
Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits
Turn Off Snubber Design for High Frequency Modules
VDS(on) VCE(sat) Measurement

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1200 V	Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Vgs (Max)	±30V	Input Capacitance (Ciss) (Max) @ Vds	2565 pF @ 25 V
Power Dissipation (Max)	335W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	APT7M120