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APT50M50JVR

N-Channel 500 V 77A (Tc) Chassis Mount ISOTOP®

Manufacturer:

MICROCHIP
Mfr.Part #:

APT50M50JVR
Datasheet:

APT50M50JVR Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Avalanche Energy Rating (Eas):

3600 mJ
Case Connection:

ISOLATED
EDA/CAD Models:

Request Free CAD Models for APT50M50JVR

Email: [email protected]

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Tel: +852 95804164

APT50M50JVR General Description

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode power transistors with lower EMI characteristics and lower costcompared to previous generation devices. These MOSFETs / FREDFETs have beenoptimized for both hard and soft switching in high frequency, high voltageapplications rated above 500 W.
The Power MOS 8™ series is a result of extensive research into quiet switching.Input and reverse transfer capacitance values as well as their ratio were setat specific values to achieve quiet switching with minimal switching loss. ThePower MOS 8™ series of devices are inherently quiet switching, stable whenconnected in parallel, very efficient, and lower cost than previousgenerations.

Power MOS 7® is a family of low loss, high voltage, N-Channel enhancementmode power MOSFETS. Both conduction and switching losses are addressed withPower MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combineslower conduction and switching losses along with exceptionally fast switchingspeeds.

Power MOS V® can still provide the best trade-off between performance andcost in some applications. Power MOS V® utilizes a low resistance aluminummetal gate structure. This allows for faster gate signal propagation than ispossible with conventional polysilicon gate structures. The result is extremelylow internal chip equivalent gate resistances (EGR) that are up to an order ofmagnitude lower than competitive devices which enables uniform high speedswitching across the entire chip.

Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is aMOSFET with a faster recovery intrinsic body diode. This results in improvedreliability in ZVS circuits due to shorter minority carrier lifetime andincreased commutation dv/dt ruggedness. If a fast recovery body diode is notneeded, MOSFET versions are available.

Key Features

Power Semiconductors, Power Modules and RF Power MOSFETs Catalog
Eliminating Parasitic Oscillation between Parallel MOSFETs
High Frequency Resonant Half Bridge
Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC
Introduction to MOSFETs
Latest Technology PT IGBTs vs. Power MOSFETs
Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits
Turn Off Snubber Design for High Frequency Modules
VDS(on) VCE(sat) Measurement

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Avalanche Energy Rating (Eas)	3600 mJ	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	500 V
Drain Current-Max (ID)	77 A	Drain-source On Resistance-Max	0.05 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PUFM-X4
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	308 A	Qualification Status	Not Qualified
Reference Standard	UL RECOGNIZED	Surface Mount	NO
Terminal Form	UNSPECIFIED	Terminal Position	UPPER
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON