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APT5025AN

Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 3 PIN

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APT5025AN General Description

Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 3 PIN

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code
ECCN Code EAR99 HTS Code 8541.29.00.95
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.25 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA JESD-30 Code O-MBFM-P2
JESD-609 Code e0 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 230 W Power Dissipation-Max (Abs) 230 W
Pulsed Drain Current-Max (IDM) 80 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form PIN/PEG Terminal Position BOTTOM
Transistor Element Material SILICON

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