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APT5016BFLLG +BOM

N-Channel 500 V 30A (Tc) 329W (Tc) Through Hole TO-247 [B]

Manufacturer:

Microchip Technology
Mfr.Part #:

APT5016BFLLG
Datasheet:

APT5016BFLLG Datasheet (PDF)
Series:

POWER MOS 7®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

500 V
EDA/CAD Models:

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APT5016BFLLG General Description

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode power transistors with lower EMI characteristics and lower costcompared to previous generation devices. These MOSFETs / FREDFETs have beenoptimized for both hard and soft switching in high frequency, high voltageapplications rated above 500 W.
The Power MOS 8™ series is a result of extensive research into quiet switching.Input and reverse transfer capacitance values as well as their ratio were setat specific values to achieve quiet switching with minimal switching loss. ThePower MOS 8™ series of devices are inherently quiet switching, stable whenconnected in parallel, very efficient, and lower cost than previousgenerations.
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancementmode power MOSFETS. Both conduction and switching losses are addressed withPower MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combineslower conduction and switching losses along with exceptionally fast switchingspeeds.
Power MOS V® can still provide the best trade-off between performance andcost in some applications. Power MOS V® utilizes a low resistance aluminummetal gate structure. This allows for faster gate signal propagation than ispossible with conventional polysilicon gate structures. The result is extremelylow internal chip equivalent gate resistances (EGR) that are up to an order ofmagnitude lower than competitive devices which enables uniform high speedswitching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is aMOSFET with a faster recovery intrinsic body diode. This results in improvedreliability in ZVS circuits due to shorter minority carrier lifetime andincreased commutation dv/dt ruggedness. If a fast recovery body diode is notneeded, MOSFET versions are available.

Key Features

Specifications

Series	POWER MOS 7®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	160mOhm @ 15A, 10V	Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V	Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2833 pF @ 25 V	Power Dissipation (Max)	329W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	APT5016