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APT47N60BC3G +BOM

600V Superjunction MOSFET.

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APT47N60BC3G General Description

A family of 600V Superjunction MOSFETs available in a variety of current and package options.

Key Features

  • Ultra Low RDS(on)
  • Low Miller Capacitance
  • Ultra Low Gate Charge, Qg
  • Avalanche Energy Rated
  • Extreme dv/dt Rated
  • Dual die (parallel)

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7015 pF @ 25 V
Power Dissipation (Max) 417W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Base Product Number APT47N60

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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