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APT34N80B2C3G

800V Superjunction MOSFET.

  • Manufacturer:

    Microchip

  • Mfr.Part #:

    APT34N80B2C3G

  • Datasheet:

    APT34N80B2C3G Datasheet (PDF) pdf-icon

  • Technology:

    Si

  • Mounting Style:

    Through Hole

  • Transistor Polarity:

    N-Channel

  • Number of Channels:

    1 Channel

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APT34N80B2C3G General Description

A family of 800V Superjunction MOSFETs available in a variety of current and package options.

Microchip Inventory

Key Features

  • Ultra Low RDS(ON)
  • Low Miller Capacitance
  • Ultra Low Gate Charge, Qg
  • Avalanche Energy Rated
  • Extreme dv/dt Rated
  • Dual die (parallel)
Microchip Original Stock

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 800 V
Id - Continuous Drain Current 34 A Rds On - Drain-Source Resistance 145 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.1 V
Qg - Gate Charge 180 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 417 W
Channel Mode Enhancement Configuration Single
Fall Time 6 ns Product Type MOSFET
Rise Time 15 ns Factory Pack Quantity 1
Subcategory MOSFETs Typical Turn-Off Delay Time 70 ns
Typical Turn-On Delay Time 25 ns Unit Weight 0.208116 oz

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