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AON6912 +BOM

AON6912 is a dual N-channel MOSFET with low on-resistance, suitable for power management applications.

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AON6912 General Description

The AON6912 is a versatile and high-performance dual N-channel enhancement mode FET that offers excellent efficiency and power handling capabilities. With a drain-source voltage rating of 30V and a continuous drain current of 10A, this FET is well-suited for a range of power management applications, from DC-DC converters to battery protection circuits. Its low on-resistance of 17mΩ at a gate-source voltage of 10V ensures minimal power loss, making it an ideal choice for applications where energy efficiency is critical. The compact DFN3x3 package and wide operating temperature range further enhance the FET's suitability for demanding environments

Key Features

  • High efficiency power stage
  • Integrated a high-side N-Channel and a low-side N-Channel MOSFET
  • Logic level compatible inputs for operation down to 2.5V
  • Adjustable output voltage from 0.6V to VDD-2V
  • Over-temperature protection and over-current protection
  • Available in a small 3x3mm QFN package

Application

  • Mobile phones
  • Laptops
  • Tablets
  • Portable electronic devices
  • Chargers
  • DC-DC converters

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code compliant
ECCN Code EAR99

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