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A3T18H455W23SR6

RF Mosfet 30 V 600 mA 1.805GHz ~ 1.88GHz 16.7dB 192W ACP-1230S-4L2S

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A3T18H455W23SR6 General Description

RF Mosfet 30 V 600 mA 1.805GHz ~ 1.88GHz 16.7dB 192W ACP-1230S-4L2S

NXP Semiconductor Inventory

Key Features

Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
NXP Semiconductor Original Stock
NXP Semiconductor Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs Series -
Technology LDMOS Configuration Dual
Frequency 1.805GHz ~ 1.88GHz Gain 16.7dB
Voltage - Test 30 V Current Rating (Amps) 10µA
Noise Figure - Current - Test 600 mA
Power - Output 192W Voltage - Rated 65 V
Mounting Type Chassis Mount Base Product Number A3T18
Product Category RF MOSFET Transistors Transistor Polarity Dual N-Channel
Id - Continuous Drain Current 3.6 A Vds - Drain-Source Breakdown Voltage - 500 mV, 65 V
Operating Frequency 1805 MHz to 1880 MHz Output Power 87 W
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT Number of Channels 2 Channel
Product Type RF MOSFET Transistors Factory Pack Quantity 150
Subcategory MOSFETs Transistor Type LDMOS FET
Type RF Power MOSFET Vgs - Gate-Source Voltage - 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage 1.4 V Part # Aliases 935354975128
Unit Weight 0.212803 oz

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A3T18H455W23SR6 Datasheet PDF

Preliminary Specification A3T18H455W23SR6 PDF Download

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