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See Technical Specifications

71V416S12PHG8 +BOM

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II

Manufacturer:

Renesas Technology Corp
Mfr.Part #:

71V416S12PHG8
Datasheet:

71V416S12PHG8 Datasheet (PDF)
Memory Type:

Volatile
Memory Format:

SRAM
Technology:

SRAM - Asynchronous
Memory Size:

4Mbit
EDA/CAD Models:

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71V416S12PHG8 General Description

Whether used in industrial automation, automotive electronics, or consumer electronics, the 71V416S12PHG8 offers a cost-effective solution for meeting the growing demand for high-speed memory solutions. Its compatibility with standard interface protocols and ease of integration make it a popular choice among designers and engineers seeking reliable and efficient memory solutions

Key Features

JEDEC Center Power / GND pinout for reduced noise.
Equal access and cycle times
– Commercial and Industrial: 10/12/15ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
LVTTL-compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V power supply
Available in 44-pin, 400 mil plastic SOJ, 44-pin, 400 mil TSOP Type II, and 48-pin BGA packages

Specifications

Category	Integrated Circuits (ICs)MemoryMemory	Series	-
Memory Type	Volatile	Memory Format	SRAM
Technology	SRAM - Asynchronous	Memory Size	4Mbit
Memory Organization	256K x 16	Memory Interface	Parallel
Write Cycle Time - Word, Page	12ns	Access Time	12 ns
Voltage - Supply	3V ~ 3.6V	Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount	Base Product Number	71V416S