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See Technical Specifications

71V35761SA200BG8 +BOM

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

Manufacturer:

Renesas Electronics
Mfr.Part #:

71V35761SA200BG8
Datasheet:

71V35761SA200BG8 Datasheet (PDF)
Memory Size:

4 Mbit
Organization:

128 k x 36
Access Time:

3.1 ns
Maximum Clock Frequency:

200 MHz
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71V35761SA200BG8 General Description

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.

Key Features

High system speed 200MHz (3.1ns clock access time)
LBO input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte write
enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
3.3V I/O
Optional - Boundary Scan JTAG Interface (IEEE 1149.1
compliant)
Available in 100-pin TQFP, 119-pin BGA and 165 fpBGA packages

Specifications

Product Category	SRAM	Memory Size	4 Mbit
Organization	128 k x 36	Access Time	3.1 ns
Maximum Clock Frequency	200 MHz	Interface Type	Parallel
Supply Voltage - Max	3.465 V	Supply Voltage - Min	3.135 V
Supply Current - Max	360 mA	Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 70 C	Mounting Style	SMD/SMT
Height	2.15 mm	Length	14 mm
Memory Type	SDR	Moisture Sensitive	Yes
Product Type	SRAM	Series	71V35761SA200
Factory Pack Quantity	1000	Subcategory	Memory & Data Storage
Type	Synchronous	Width	22 mm
Part # Aliases	IDT71V35761SA200BG8 71V35761