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2SK3683-01MR

Power Field-Effect Transistor, 19A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

2SK3683-01MR General Description

Power Field-Effect Transistor, 19A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Key Features

  • 1. High speed switching
  • 2. Low on-resistance
  • 3. No secondary breadown
  • 4. Low driving power
  • 5. Avalanche-proof

Specifications

Part Life Cycle Code Not Recommended Pin Count 3
Reach Compliance Code ECCN Code EAR99
Avalanche Energy Rating (Eas) 245.3 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 19 A Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 76 A Qualification Status Not Qualified
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

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