This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

2SK2961 +BOM

Trans MOSFET N-CH Si 60V 2A 3-Pin TO-92 Mod

Manufacturer:

Toshiba
Mfr.Part #:

2SK2961
Datasheet:

2SK2961 Datasheet (PDF)
ECCN (US):

EAR99
Automotive:

No
PPAP:

No
Material:

Si
EDA/CAD Models:

Request Free CAD Models for 2SK2961

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable 2SK2961 driver, produced by Toshiba. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the 2SK2961.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

ECCN (US)	EAR99	Part Status	Obsolete
Automotive	No	PPAP	No
Category	Power MOSFET	Material	Si
Configuration	Single	Process Technology	L2-pi-MOS V
Channel Mode	Enhancement	Channel Type	N
Number of Elements per Chip	1	Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20	Maximum Gate Threshold Voltage (V)	2
Operating Junction Temperature (°C)	150	Maximum Continuous Drain Current (A)	2
Maximum Gate Source Leakage Current (nA)	10000	Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	270@10V	Typical Gate Charge @ Vgs (nC)	5.8@10V
Typical Gate Charge @ 10V (nC)	5.8	Typical Gate to Drain Charge (nC)	1.7
Typical Gate to Source Charge (nC)	4.1	Typical Reverse Recovery Charge (nC)	40.5
Typical Input Capacitance @ Vds (pF)	170@10V	Typical Reverse Transfer Capacitance @ Vds (pF)	25@10V
Minimum Gate Threshold Voltage (V)	0.8	Typical Output Capacitance (pF)	75
Maximum Power Dissipation (mW)	900	Typical Fall Time (ns)	50
Typical Rise Time (ns)	10	Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150	Typical Drain Source Resistance @ 25°C (mOhm)	200@10V\|260@4V
Maximum Positive Gate Source Voltage (V)	20	Maximum Pulsed Drain Current @ TC=25°C (A)	6
Typical Reverse Recovery Time (ns)	45	Maximum Diode Forward Voltage (V)	1.5
Mounting	Through Hole	PCB changed	3
Pin Count	3	Lead Shape	Through Hole