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2SK1306

Power Field-Effect Transistor, 15A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN

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2SK1306 General Description

Power Field-Effect Transistor, 15A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN

Key Features

  • Low on-resistance
  • High speed switching
  • Low drive current
  • 4 V gate drive device
  • - Can be driven from 5 V source
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Specifications

Part Life Cycle Code Transferred Pin Count 3
ECCN Code EAR99 Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 15 A Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.18 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 60 A Qualification Status Not Qualified
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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