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2SCR563F3TR

Bipolar (BJT) Transistor NPN 50 V 6 A 200MHz 1 W Surface Mount HUML2020L3

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Bipolar Transistors - BJT Small and Excellent Thermal Conductivity, NPN 6A 50V Middle Power Transistor

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	NPN	Current - Collector (Ic) (Max)	6 A
Voltage - Collector Emitter Breakdown (Max)	50 V	Vce Saturation (Max) @ Ib, Ic	350mV @ 150mA, 3A
Current - Collector Cutoff (Max)	1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 500mA, 3V
Power - Max	1 W	Frequency - Transition	200MHz
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Product Category:	Bipolar Transistors - BJT	Mounting Style:	SMD/SMT
Transistor Polarity:	NPN	Configuration:	Single
Collector- Emitter Voltage VCEO Max:	50 V	Collector- Base Voltage VCBO:	50 V
Emitter- Base Voltage VEBO:	6 V	Collector-Emitter Saturation Voltage:	150 mV
Maximum DC Collector Current:	6 A	Pd - Power Dissipation:	1 W
Gain Bandwidth Product fT:	200 MHz	Minimum Operating Temperature:	-
Maximum Operating Temperature:	+ 150 C	Packaging:	Cut Tape
Continuous Collector Current:	6 A	DC Collector/Base Gain hfe Min:	180 at 0.5 A, 3 V
DC Current Gain hFE Max:	450 at 0.5 A, 3 V	Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	3000	Subcategory:	Transistors
Technology:	Si	Part # Aliases:	2SCR563F3