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2SC5706-H

2SC5706 is Bipolar Transistor, 50V, 5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Current Switching Applications.

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2SC5706-H General Description

2SC5706 is Bipolar Transistor, 50V, 5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Current Switching Applications.

Key Features

  • Adoption of FBET and MBIT processes
  • Large current capacitance
  • Low collector-to-emitter saturation voltage
  • High-speed switching
  • High allowable power dissipation

Application

  • DC-DC converter, Relay drivers, Lamp drivers, Motor drivers, Flash

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 160 mV
Maximum DC Collector Current 7.5 A Pd - Power Dissipation 15 W
Gain Bandwidth Product fT 400 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series 2SC5706
Continuous Collector Current 5 A DC Current Gain hFE Max 560
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 500
Subcategory Transistors Technology Si
Unit Weight 0.139332 oz

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