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2SB710

Bipolar Transistors - BJT Discrete Semiconductor Products Transistors (BJT) - Single - TRANS PNP GP AMP 25VCEO MINI 3P

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2SB710 General Description

Bipolar Transistors - BJT Discrete Semiconductor Products Transistors (BJT) - Single - TRANS PNP GP AMP 25VCEO MINI 3P

Specifications

Part Life Cycle Code Obsolete Pin Count 3
Reach Compliance Code ECCN Code EAR99
Collector Current-Max (IC) 0.5 A Collector-Emitter Voltage-Max 25 V
Configuration SINGLE DC Current Gain-Min (hFE) 85
JEDEC-95 Code TO-236 JESD-30 Code R-PDSO-G3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 125 °C
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN LEAD Terminal Form GULL WING
Terminal Position DUAL Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 200 MHz

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