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2SB1386T100R

Bipolar (BJT) Transistor PNP 20 V 5 A 120MHz 2 W Surface Mount MPT3

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2SB1386T100R General Description

Bipolar (BJT) Transistor PNP 20 V 5 A 120MHz 2 W Surface Mount MPT3

Rohm Semiconductor Inventory

Key Features

  • 1) Low VCE(sat).
  • VCE(sat) = -0.35V (Typ.)
  • (IC / IB = -4A / -0.1A)
  • 2) Excellent DC current gain characteristics.
  • 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

Specifications

Transistor Type PNP Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 20 V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 4A
Current - Collector Cutoff (Max) 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA, 2V
Power - Max 2 W Frequency - Transition 120MHz
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Base Product Number 2SB1386

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Availability: 7288 PCS

+BOM
Qty. Unit Price Ext. Price
5+ $0.147 $0.74
50+ $0.130 $6.50
150+ $0.123 $18.45
1000+ $0.113 $113.00
2000+ $0.109 $218.00
5000+ $0.106 $530.00

The prices below are for reference only.

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