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2SB1188T100R +BOM

2SB1188 Series 32 V 2 A SMT PNP Medium Power Transistor - SC-62

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

2SB1188T100R
Datasheet:

2SB1188T100R Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

3
Reach Compliance Code:

compliant
ECCN Code:

EAR99

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

2SB1188T100R General Description

TRANSISTOR,PNP,32V,2A,SO-89; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -32V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 500mW; DC Collector Current: -2A; DC Current Gain hFE: 82hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 100MHz

Key Features

1) Low VCE(sat).
VCE(sat) = −0.5V (Typ.)
(IC/IB = −2A / −0.2A)
2) Complements the 2SD1766 / 2SD1758 / 2SD1862

Specifications

Part Life Cycle Code	Obsolete	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8541.29.00.75	Case Connection	COLLECTOR
Collector Current-Max (IC)	2 A	Collector-Emitter Voltage-Max	32 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	180
JESD-30 Code	R-PSSO-F3	JESD-609 Code	e2
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	PNP	Power Dissipation Ambient-Max	2 W
Power Dissipation-Max (Abs)	2 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Tin/Copper (Sn/Cu)
Terminal Form	FLAT	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	10	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	100 MHz
VCEsat-Max	0.8 V	Product Category	Bipolar Transistors - BJT
Mounting Style	SMD/SMT	Transistor Polarity	PNP
Collector- Emitter Voltage VCEO Max	32 V	Collector- Base Voltage VCBO	40 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	2 A	Pd - Power Dissipation	2 W
Gain Bandwidth Product fT	100 MHz	Minimum Operating Temperature	-
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	- 2 A
DC Collector/Base Gain hfe Min	82	DC Current Gain hFE Max	390
Height	1.5 mm	Length	4.5 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1000
Subcategory	Transistors	Technology	Si
Width	2.5 mm	Unit Weight	0.004603 oz