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2SA1693

Power Bipolar Transistor 2SA1693

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2SA1693 General Description

Bipolar (BJT) Transistor PNP 80 V 6 A 20MHz 60 W Through Hole TO-3P

Key Features

  • High DC current gain
  • High collector-base breakdown voltage

Specifications

Packaging Bulk Part Status Active
Transistor Type PNP Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 80 V Vce Saturation (Max) @ Ib, Ic 1.5V @ 200mA, 2A
Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 2A, 4V
Power - Max 60 W Frequency - Transition 20MHz
Operating Temperature 150°C (TJ) Mounting Type Through Hole

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