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2N7002W-7-F +BOM
channel 60V MOSFET with 0.115A current rating in SOT-323 package
SOT-323-3-
Manufacturer:
-
Mfr.Part #:
2N7002W-7-F
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Datasheet:
-
Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number of Channels:
1 Channel
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EDA/CAD Models:
Availability: 4450 PCS
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2N7002W-7-F General Description
The 2N7002W-7-F is a N-channel MOSFET transistor manufactured by ON Semiconductor. It is housed in a SOT-323 package and features a low on-state resistance of 5.5 ohms and a maximum continuous drain current of 285 mA. The maximum gate-source voltage is ±20V, making it suitable for a wide range of low-power applications.This MOSFET transistor has a threshold voltage range of 1-2.5V and a fast switching speed, making it suitable for applications such as power management, small signal amplification, and level shifting. The 2N7002W-7-F also boasts a low gate charge of 2.7nC, ensuring efficient operation.With a compact and lightweight design, this transistor is ideal for use in portable electronics and other space-constrained applications. Its high current handling capability and low on-resistance make it a versatile component for various circuit designs.
Key Features
- Small surface-mount package
- Low on-resistance
- Low gate threshold voltage
- Fast switching speed
- Compliant with RoHS and halogen-free standards
- Designed for use in general-purpose switching applications
Application
- Power management systems
- Battery management systems
- DC-DC converters
- Voltage regulators
- Motor control circuits
- LED drivers
- Sensor interfaces
- Switching circuits
- Solenoid drivers
- Relay drivers
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 115 mA | Rds On - Drain-Source Resistance | 13.5 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 200 mW | Channel Mode | Enhancement |
Series | 2N7002W | Configuration | Single |
Forward Transconductance - Min | 80 mS | Height | 1 mm |
Length | 2.2 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | Enhancement Mode Field Effect Transistor | Typical Turn-Off Delay Time | 11 ns |
Typical Turn-On Delay Time | 7 ns | Width | 1.35 mm |
Unit Weight | 0.000212 oz |
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In Stock: 4,450
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
20+ | $0.025 | $0.50 |
200+ | $0.022 | $4.40 |
600+ | $0.020 | $12.00 |
3000+ | $0.017 | $51.00 |
9000+ | $0.016 | $144.00 |
21000+ | $0.015 | $315.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for 2N7002W-7-F, guaranteed quotes back within 12hr.
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