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2N6439 +BOM

RF Bipolar Transistors RF Transistor

2N6439 General Description

Designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.

2n6439 2n6439

Key Features

  • Guaranteed Performance in 225 to 400 MHz broadband amplifier @ 28 Vdc: Output Power = 60 W over 225 to 400 MHz band, Minimum Gain = 7.8 dB @ 400 MHz
  • Gold Metallization System for High Reliability Application
  • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc
  • Built–In Matching Network for Broadband Operation using Double Match Technique
  • Aerospace and Defense
2n6439 2n6439

Application

  • Gain: 7.8 dB
  • Bias Voltage: 28 V
  • Efficiency: 55 %
  • Pout: 60 W
  • Min Frequency: 225 MHz
  • Max Frequency: 400 MHz
2n6439 2n6439

Specifications

Product Category RF Bipolar Transistors Transistor Type Bipolar Power
Technology Si Transistor Polarity NPN
Operating Frequency 400 MHz DC Collector/Base Gain hfe Min 10
Collector- Emitter Voltage VCEO Max 33 V Emitter- Base Voltage VEBO 4 V
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Mounting Style Screw Mount Gain Bandwidth Product fT 400 MHz
Pd - Power Dissipation 146 W Product Type RF Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Type RF Bipolar Power Unit Weight 0.836769 oz

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Ratings and Reviews

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A
A**n 07/06/2023

The goods received. Packed in antistatic bag. Delivery exactly 5 days to krasnodar. Quality is decent. Thank you

12
L
L**m 12/01/2020

The goods arrived according to the supply in full and perfect thanks to all

19
J
J**e 07/08/2020

Shipping about 5 days, packing is as usual. Works. The young lady with her hissing "bluetooth mode" kumarit, there will be time-resend. It ends without problems (meizu u20), even at the same time with the bt earphone.

4

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