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2N4957 +BOM

RF Transistor PNP 30V 30mA 200mW Through Hole TO-72

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2N4957 General Description

RF Transistor PNP 30V 30mA 200mW Through Hole TO-72

2n4957 2n4957

Key Features

:  Special Characteristics     ft = 1.6 GHz (typ) at 2.0 mA/10V

APPLICATIONS:     Designed for high-gain, low-noise class A amplifiers, oscillators and mixers.  

2n4957

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors Series -
Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 30V
Frequency - Transition - Noise Figure (dB Typ @ f) 3.5dB @ 450MHz
Gain 25dB Power - Max 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 10V Current - Collector (Ic) (Max) 30mA
Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole
Product Category Bipolar Transistors - BJT Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si

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Ratings and Reviews

More
M
M**n 11/17/2023

Good sensors, work clearly. There are no transient states, either yes or no. The order is very satisfied, i will order more

10
N
N**s 08/29/2023

To ukraine delivered quickly, the quality is satisfied, like the original. Ringing showed that all chips are identical.

18
M
M**a 07/05/2023

Long! Paid on january 12, came in late march.

1
L
L**s 03/21/2022

All right, delivery for 5 days

7

Reviews

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