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2N3947

Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 1.2 W Through Hole TO-18

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Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 1.2 W Through Hole TO-18

Part Life Cycle Code	Obsolete	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8541.29.00.75
Collector Current-Max (IC)	0.2 A	Collector-Base Capacitance-Max	4 pF
Collector-Emitter Voltage-Max	40 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	40	JEDEC-95 Code	TO-206AA
JESD-30 Code	O-MBCY-W3	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	200 °C	Polarity/Channel Type	NPN
Power Dissipation Ambient-Max	1.2 W	Power Dissipation-Max (Abs)	0.36 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	TIN LEAD	Terminal Form	WIRE
Terminal Position	BOTTOM	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	300 MHz
Turn-off Time-Max (toff)	450 ns	Turn-on Time-Max (ton)	70 ns
VCEsat-Max	0.3 V	Product Category	Bipolar Transistors - BJT
Mounting Style	Through Hole	Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	40 V	Pd - Power Dissipation	360 mW
Gain Bandwidth Product fT	300 MHz	Continuous Collector Current	200 mA
DC Collector/Base Gain hfe Min	100 at 1 mA, 10 V	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	30	Subcategory	Transistors
Technology	Si