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See Technical Specifications

2N3055HG

Transistor Silicon Power NPN

Manufacturer:

onsemi
Mfr.Part #:

2N3055HG
Datasheet:

2N3055HG Datasheet (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

15 A
Voltage - Collector Emitter Breakdown (Max):

60 V
Vce Saturation (Max) @ Ib, Ic:

3V @ 3.3A, 10A
EDA/CAD Models:

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2N3055HG General Description

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

Key Features

DC Current Gain - h_FE = 20-70 @ I_C = 4 Adc
Collector-Emitter Saturation Voltage - V_CE(sat) = 1.1 Vdc (Max) @ I_C = 4 Adc
Excellent Safe Operating Area
Pb-Free Packages are Available

Specifications

Series	-	Transistor Type	NPN
Current - Collector (Ic) (Max)	15 A	Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	3V @ 3.3A, 10A	Current - Collector Cutoff (Max)	700µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V	Power - Max	115 W
Frequency - Transition	2.5MHz	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Base Product Number	2N3055