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2ED2106S06FXUMA1
Gate Drivers LEVEL SHIFT SOI
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Manufacturer:
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Mfr.Part #:
2ED2106S06FXUMA1
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Datasheet:
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RHoS:
yes
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PBFree:
yes
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HalogenFree:
yes
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EDA/CAD Models:
Availability: 3357 PCS
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2ED2106S06FXUMA1 General Description
High-Side and Low-Side Gate Driver IC CMOS, TTL PG-DSO-8-69
Key Features
- Operating voltages (VS node) upto + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
- Floating channel designed for bootstrap operation
- Maximum supply voltage of 25 V
- Independent under voltage lockout (UVLO) for both channels
- 200 ns propagation delay
- HIN, LIN logic input
- Logic operational up to –11 V on VS Pin
- Negative voltage tolerance on inputs of –5 V
- The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
- Integrated bootstrap diode - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
- 50% lower level-shift losses
- Excellent ruggedness and noise immunity against negative transient voltages on VS pin
Application
- AC-DC power supplies
- Home appliances
- Motor control and drives
- Power tools
Specifications
RHoS | yes | PBFree | yes |
HalogenFree | yes |
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Availability: 3357 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.432 | $1.43 |
200+ | $0.554 | $110.80 |
500+ | $0.536 | $268.00 |
1000+ | $0.526 | $526.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for 2ED2106S06FXUMA1, guaranteed quotes back within 12hr.
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