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2ED020I12-FI

EiceDRIVER™ 1200 V half-bridge Gate Driver IC for IGBT, MOSFET and SiC MOSFET with typical 1.5 A source and 2.5 A sink currents in PG-DSO-18 package.

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2ED020I12-FI General Description

EiceDRIVER™ 1200 V half-bridge Gate Driver IC for IGBT, MOSFET and SiC MOSFET with typical 1.5 A source and 2.5 A sink currents in PG-DSO-18 package.

2ed020i12-fi 2ed020i12-fi

Key Features

  • It has a drain-source voltage (VDS) rating of 1200V and a continuous drain current (ID) rating of 2A.
  • It has a low gate charge (Qg) of 1.6nC and a low on-resistance (RDS(on)) of 2.4 ohms.
  • It has a fast switching speed, making it suitable for use in high-frequency applications.
  • It has a compact surface-mount package, making it easy to mount on circuit boards.

Application

  • AC-DC power supplies
  • DC-DC converters
  • Uninterruptible power supplies (UPS)
  • Solar inverters
  • Motor control

Specifications

Input Vcc max 18.0 V Input Vcc min 14.0 V
Configuration Half Bridge Isolation Type Galvanic isolation - Functional

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Ratings and Reviews

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L
L**n 09/15/2023

Waited muitooo time and the product arrived, received the five star, but the lack of delayed my design. recommend!

3

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Availability: 4025 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $4.902 $4.90
10+ $4.287 $42.87
30+ $3.912 $117.36
100+ $3.598 $359.80

The prices below are for reference only.

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