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See Technical Specifications

1N1206A +BOM

DIODE; 12A IF; 600V; 2.0C/W; 230 A @ 50 HZ, 240 A @ 60 HZ IFMS; 1.0MA IR; -65C

Manufacturer:

GeneSiC Semiconductor
Mfr.Part #:

1N1206A
Datasheet:

1N1206A Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8541.10.00.80
EDA/CAD Models:

Request Free CAD Models for 1N1206A

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1N1206A General Description

The 1N1206A is a robust diode designed for high-power applications, with a repetitive reverse voltage maximum of 600V. This makes it suitable for use in circuits where voltage spikes or transients may occur. The forward current rating of 12A ensures that the diode can handle high current loads without overheating or failing prematurely. Additionally, the forward surge current maximum of 240A provides an extra level of protection against sudden spikes in current. With a forward voltage maximum of 1.35V, the diode offers low power dissipation and efficient operation

Key Features

High Surge Capability
Types from 50 V to 600 V VRRM
Not ESD Sensitive

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.10.00.80
Factory Lead Time	35 Weeks	Additional Feature	HIGH RELIABILITY
Application	POWER	Case Connection	CATHODE
Configuration	SINGLE	Diode Element Material	SILICON
Diode Type	RECTIFIER DIODE	JEDEC-95 Code	DO-203AA
JESD-30 Code	O-MUPM-D1	JESD-609 Code	e0
Non-rep Pk Forward Current-Max	240 A	Number of Elements	1
Number of Phases	1	Number of Terminals	1
Output Current-Max	12 A	Qualification Status	Not Qualified
Reference Standard	MIL	Rep Pk Reverse Voltage-Max	600 V
Reverse Recovery Time-Max	5 µs	Surface Mount	NO
Terminal Finish	TIN LEAD	Terminal Form	SOLDER LUG
Terminal Position	UPPER	Product Category	Rectifiers
Mounting Style	Stud Mount	Product	Rectifiers
Product Type	Rectifiers	Factory Pack Quantity	1
Subcategory	Diodes & Rectifiers