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ZTX753 +BOM

Trans GP BJT PNP 100V 2A 1000mW 3-Pin E-Line

ZTX753 General Description

TRANSISTOR, PNP E-LINE; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 140MHz; Power Dissipation Pd: 1W; DC Collector Current: -2A; DC Current Gain hFE: 100hFE; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 2A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Device Marking: ZTX753; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 140MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +200°C; Pin Configuration: e; Power Dissipation Ptot Max: 1W; Transistor Type: Power Bipolar; Voltage Vcbo: 120V

Key Features

* 100 Volt VCEO

* 2 Amp continuous current

* Low saturation voltage

* Ptot=1 Watt

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 34 Weeks
Collector Current-Max (IC) 2 A Collector-Emitter Voltage-Max 100 V
Configuration SINGLE DC Current Gain-Min (hFE) 25
JEDEC-95 Code TO-92 JESD-30 Code R-PSIP-W3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 200 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 1 W Qualification Status Not Qualified
Reference Standard CECC Surface Mount NO
Terminal Finish MATTE TIN Terminal Form WIRE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 140 MHz

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