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See Technical Specifications

2N7002-7-F +BOM

resistance of 7.5 Ohms

Manufacturer:

Diodes Incorporated
Mfr.Part #:

2N7002-7-F
Datasheet:

2N7002-7-F Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for 2N7002-7-F

Email: [email protected]

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Tel: +852 95804164

2N7002-7-F General Description

With its reliable and efficient performance, the 2N7002-7-F is a valuable addition to any electronic designer's toolkit. Its N-channel enhancement mode and metal-oxide semiconductor construction make it well-suited for use in demanding applications where small signal switching is required

Key Features

HIGH RELIABILITY, LOW THRESHOLD

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	210 mA	Rds On - Drain-Source Resistance	5 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	223 pC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	540 mW
Channel Mode	Enhancement	Series	2N7002
Configuration	Single	Fall Time	5.6 ns
Forward Transconductance - Min	80 mS	Height	1 mm
Length	2.9 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	3 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time	7.6 ns	Typical Turn-On Delay Time	2.8 ns
Width	1.3 mm	Unit Weight	0.000282 oz