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UCC27201AQDDARQ1 +BOM

Automotive 3-A, 120-V half bridge gate driver with 8-V UVLO and negative voltage handling

Manufacturer:

TI
Mfr.Part #:

UCC27201AQDDARQ1
Datasheet:

UCC27201AQDDARQ1 Datasheet (PDF)
Bus voltage (max) (V):

110
Power switch:

MOSFET
Input VCC (min) (V):

8
Input VCC (max) (V):

17
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UCC27201AQDDARQ1 General Description

The UCC27201A-Q1 high frequency N-Channel MOSFET driver includes a 120-V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-Channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1-ns between the turn-on and turn-off of each other. The UCC27201A-Q1 is based on the popular UCC27200 and UCC27201 drivers, but offer some enhancements. In order to improve performance in noisy power supply environments the UCC27201A-Q1 has the ability to withstand a maximum of -18 V on its HS pin.

An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.

The UCC27201A-Q1 has TTL-compatible thresholds and is offered in a 10-Pin VSON and an 8-pin SOIC with a thermal pad.

For all available packages, see the orderable addendum at the end of the data sheet.

Key Features

Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to 140°C Ambient Operating Temperature Range
- Device HBM Classification Level 1C
- Device CDM Classification Level C3
Negative Voltage Handling on HS (–18 V)
Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration
Maximum Boot Voltage: 120 V
Maximum VDD Voltage: 20 V
On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode
Greater than 1 MHz of Operation
20-ns Propagation Delay Times
3-A Sink, 3-A Source Output Currents
8-ns Rise and 7-ns Fall Time with 1000-pF Load
1-ns Delay Matching
Under Voltage Lockout for High-Side and Low-Side Driver
Offered in 8-Pin PowerPad SOIC-8 (DDA) and 10-Pin VSON (DMK) Packages

Specifications

Bus voltage (max) (V)	110	Power switch	MOSFET
Input VCC (min) (V)	8	Input VCC (max) (V)	17
Peak output current (A)	3	Operating temperature range (°C)	-40 to 125
Undervoltage lockout (typ) (V)	8	Rating	Automotive
Propagation delay time (µs)	0.02	Rise time (ns)	8
Fall time (ns)	7	Iq (mA)	0.001
Input threshold	TTL	Channel input logic	TTL
Negative voltage handling at HS pin (V)	-15	Features	Negative voltage handling
Driver configuration	Noninverting