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See Technical Specifications

UCC21750DW +BOM

Rugged construction for reliable operatio

Manufacturer:

TI
Mfr.Part #:

UCC21750DW
Datasheet:

UCC21750DW Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for UCC21750DW

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UCC21750DW General Description

Featuring SiO2 capacitive isolation technology, the UCC21750DW provides a high level of isolation between the input and output sides, supporting up to 1.5-kV RMS working voltage. With exceptional surge immunity of 12.8-kV PK and a long isolation barrier life exceeding 40 years, this driver guarantees utmost safety and reliability in high-voltage environments. Additionally, it boasts low part-to-part skew and superior common mode noise immunity of over 150-V/ns, ensuring stable and precise operation under varying conditions

Key Features

5.7-kV_RMS single channel isolated gate driver
SiC MOSFETs and IGBTs up to 2121V_pk
33-V maximum output drive voltage (VDD – VEE)
±10-A drive strength and split output
150-V/ns minimum CMTI
200-ns response time fast DESAT protection
4-A Internal active miller clamp
400-mA soft turn-off when fault happens
Isolated analog sensor with PWM output for
- Temperature sensing with NTC, PTC or thermal diode
- High voltage DC-link or phase voltage
Alarm FLT on overcurrent and reset from RST/EN
Fast enable and disable response on RST/EN
Reject < 40-ns noise transient and pulse on input pins
12-V VDD UVLO with power good on RDY
Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
SOIC-16 DW package with creepage and clearance distance > 8 mm
Operating junction temperature –40°C to 150°C
Safety-related certifications:
- Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
- UL 1577 component recognition program

Specifications

Source Content uid	UCC21750DW	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.39.00.01
High Side Driver	NO	Interface IC Type	BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 Code	R-PDSO-G16	Moisture Sensitivity Level	2
Number of Channels	1	Number of Functions	1
Number of Terminals	16	Peak Reflow Temperature (Cel)	260
Surface Mount	YES	Temperature Grade	AUTOMOTIVE
Terminal Finish	NICKEL PALLADIUM GOLD	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Number of channels	1	Isolation rating	Reinforced
Withstand isolation voltage (VISO) (Vrms)	5700	Working isolation voltage (VIOWM) (Vrms)	2121
Transient isolation voltage (VIOTM) (VPK)	8000	Power switch	IGBT, SiCFET
Peak output current (A)	10	Features	Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off
Output VCC/VDD (max) (V)	33	Output VCC/VDD (min) (V)	13
Input VCC (min) (V)	3	Input VCC (max) (V)	5.5
Propagation delay time (µs)	0.09	Input threshold	CMOS
Operating temperature range (°C)	-40 to 125	Rating	Catalog
Bus voltage (max) (V)	2121	Rise time (ns)	33
Fall time (ns)	27	Undervoltage lockout (typ) (V)	12