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SQ2315ES-T1-GE3

Automotive P-Channel 12 V (D-S) 175 degrees Celsius MOSFET

Manufacturer:

Vishay
Mfr.Part #:

SQ2315ES-T1-GE3
Datasheet:

SQ2315ES-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SQ2315ES-T1-GE3

Email: [email protected]

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Tel: +852 95804164

SQ2315ES-T1-GE3 General Description

Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 50mOhm @ 3.5A, 10V 5A Tc -55°C~150°C TJ Trans MOSFET P-CH 12V 5A Automotive 3-Pin SOT-23 T/R

Key Features

TrenchFET® power MOSFET

AEC-Q101 qualified c

100 % Rg and UIS tested

Application

Power management circuits.
DC-DC converters.
Voltage regulation.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	5 A	Rds On - Drain-Source Resistance	50 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	450 mV
Qg - Gate Charge	9 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	2 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	TrenchFET	Series	SQ
Configuration	Single	Fall Time	13 ns
Height	1.45 mm	Length	2.9 mm
Product Type	MOSFET	Rise Time	19 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	28 ns
Typical Turn-On Delay Time	17 ns	Width	1.6 mm
Part # Aliases	SQ2315ES-T1_BE3	Unit Weight	0.000282 oz