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In Stock: 5,772
P-Channel 100 V 19A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)
IRF9540S
obsolete
The IRF9540S is a Power Field-Effect Transistor (FET) from Vishay, designed for high-power switching applications. It's a P-channel device with a maximum current rating of 19A and voltage rating of 100V. The FET features a low on-resistance of 0.2ohm, making it suitable for fast-switching applications. The IRF9540S is available in a surface-mount package (TO-263-3, D2PAK) with a tab, allowing for easy mounting and connection. It has a dynamic dV/dt rating, repetitive avalanche rating, and an operating temperature range of -40°C to 175°C. This FET is designed for high-frequency switching applications, such as motor control, power supplies, and DC-DC converters. Its fast switching capability and high current handling make it suitable for demanding applications where high efficiency and reliability are required.
According to the product information, the features of IRF9540S are:
These features highlight the transistor's capabilities for high-performance applications.
According to the product information, the package types for IRF9540S are TO-263-3, D2PAK (2 Leads + Tab), and TO-263AB.
The manufacturer of the IRF9540S is Vishay, a leading global provider of semiconductor components, including diodes, MOSFETs, IGBTs, and more.
The IRF9540S Power Field-Effect Transistor (FET) is suitable for various applications, including:
Its high current handling and fast switching capabilities make it an ideal choice for demanding power management applications.
The equivalent products of IRF9540S are:
Please note that the exact equivalent may depend on specific application and requirements.
Part Life Cycle Code | Obsolete | Pin Count | 4 |
---|---|---|---|
Reach Compliance Code | ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 640 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 19 A | Drain-source On Resistance-Max | 0.2 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e0 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Polarity/Channel Type | P-CHANNEL |
Pulsed Drain Current-Max (IDM) | 72 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | TIN LEAD |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Height | 4.83 mm |
Length | 10.67 mm | Product Type | MOSFET |
Factory Pack Quantity | 50 | Subcategory | MOSFETs |
Width | 9.65 mm | Unit Weight | 0.139332 oz |
Package/Case | TO-263-3 |
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