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SKP10N60A +BOM

Insulated Gate Bipolar Transistor SKP10N60A

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SKP10N60A General Description

IGBT NPT 600 V 20 A 92 W Through Hole PG-TO220-3-1

Key Features

  • 600V breakdown voltage
  • 10A continuous drain current
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge
  • High ruggedness

Application

  • Reliable in industrial use
  • Great for lighting projects
  • Ideal for power supplies

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Maximum Gate Emitter Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series SKP10N60 Continuous Collector Current Ic Max 20 A
Height 9.25 mm Length 10 mm
Product Type IGBT Transistors Factory Pack Quantity 500
Subcategory IGBTs Width 4.4 mm
Part # Aliases SKP10N60AXK SP000683144 SKP10N60AXKSA1 Unit Weight 0.211644 oz

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