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SI4800BDY-T1-E3 +BOM
MOSFET 30V 9A 2.5W
8-SOIC(0.154",3.90mmWidth)-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI4800BDY-T1-E3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
30 V
Availability: 6464 PCS
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SI4800BDY-T1-E3 General Description
N-Channel 30 V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
Key Features
Application
SWITCHINGSpecifications
Series | TrenchFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 18.5mOhm @ 9A, 10V | Vgs(th) (Max) @ Id | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V | Vgs (Max) | ±25V |
Power Dissipation (Max) | 1.3W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | SI4800 |
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In Stock: 6,464
Minimum Order: 1
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