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In Stock: 7,924
45V 625mW 100@100mA,1V 800mA NPN TO-92-3 Bipolar Transistors - BJT ROHS
BC337
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
---|---|---|---|
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 45 V | Collector- Base Voltage VCBO | 50 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 700 mV |
Maximum DC Collector Current | 800 mA | Pd - Power Dissipation | 625 mW |
Gain Bandwidth Product fT | 210 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current | 800 mA |
DC Collector/Base Gain hfe Min | 100 | DC Current Gain hFE Max | 630 |
Height | 5.33 mm | Length | 5.2 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 5000 |
Subcategory | Transistors | Technology | Si |
Width | 4.19 mm | Unit Weight | 0.007055 oz |
Package/Case | TO-92-3 |
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