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SI4431BDY-T1-E3 +BOM

30-V D-S MOSFET

Manufacturer:

Vishay
Mfr.Part #:

SI4431BDY-T1-E3
Datasheet:

SI4431BDY-T1-E3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for SI4431BDY-T1-E3

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SI4431BDY-T1-E3 General Description

Ideal for power control applications, the SI4431BDY-T1-E3 P-channel MOSFET comes in an 8-SOIC package, providing a compact yet robust solution. With a continuous drain current (Id) of 5.8A and a drain-source voltage (Vds) of -30V, this MOSFET delivers reliable performance in diverse electronic systems. The on-resistance (Rds(on)) is rated at 40mOhm with a test voltage (Vgs) of -10V, ensuring minimal power loss and efficient operation. The transistor case style is SOIC, featuring 8 pins for easy installation and connectivity. With a power dissipation (Pd) of 2.5W, this MOSFET is capable of handling moderate to high power levels. The termination type is SMD, and the voltage Vgs(max) is -3V, providing flexibility in voltage requirements

Key Features

None

Application

Power Management
Consumer Electronics

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	7.5 A
Rds On - Drain-Source Resistance	30 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	20 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.5 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI4
Configuration	Single	Fall Time	47 ns
Forward Transconductance - Min	18 S	Height	1.75 mm
Length	4.9 mm	Product Type	MOSFET
Rise Time	10 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	70 ns	Typical Turn-On Delay Time	10 ns
Width	3.9 mm	Part # Aliases	SI4431BDY-E3
Unit Weight	0.006596 oz