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See Technical Specifications

SI3865BDV-T1-E3 +BOM

Total Power Dissipation of 0.83W

Manufacturer:

VISHAY
Mfr.Part #:

SI3865BDV-T1-E3
Datasheet:

SI3865BDV-T1-E3 Datasheet (PDF)
Switch Type:

General Purpose
Number Of Outputs:

1
Ratio - InputOutput:

1:1
Output Configuration:

High Side
EDA/CAD Models:

Request Free CAD Models for SI3865BDV-T1-E3

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SI3865BDV-T1-E3 General Description

The SI3865BDV-T1-E3 is a high-quality MOSFET transistor designed for high-speed switching applications, offering low on-resistance and high current capability. Its compact DFN package makes it suitable for space-constrained applications, while its low gate charge and gate threshold voltage ensure efficient switching performance. Whether used in power management, battery protection, load switching, or DC-DC converters, this transistor delivers reliable and consistent performance, meeting industry standards for reliability and performance

Key Features

None

Application

Load switch

Power management

Specifications

Switch Type	General Purpose	Number of Outputs	1
Ratio - Input:Output	1:1	Output Configuration	High Side
Output Type	P-Channel	Interface	On/Off
Voltage - Load	1.8V ~ 8V	Voltage - Supply (Vcc/Vdd)	-
Current - Output (Max)	2.9A	Rds On (Typ)	45mOhm
Input Type	-	Features	Slew Rate Controlled
Fault Protection	-	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount