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SI3129DV-T1-GE3

MOSFET transistor for switching applications with 80V voltage and 3.8A current

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SI3129DV-T1-GE3 General Description

P-Channel 80 V 3.8A (Ta), 5.4A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

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Key Features

  • TrenchFET® power MOSFET
  • 100 % Rg tested
  • Material categorization:for definitions of compliance please see www.vishay.com/doc?99912
    • VISHAY Original Stock

    Application

    • 1. It is commonly used in power management applications.
    • 2. This MOSFET can be utilized in various DC-DC converter circuits.
    • 3. It can act as a switch in power supplies, inverters, and motor control applications.
    • 4. It finds application in battery protection circuits and load switches.
    VISHAY Inventory

    Specifications

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Transistor Polarity P-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
    Id - Continuous Drain Current 5.4 A Rds On - Drain-Source Resistance 82.7 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
    Qg - Gate Charge 12 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 4.2 W
    Channel Mode Enhancement Tradename TrenchFET
    Configuration Single Fall Time 12 ns
    Product Type MOSFET Rise Time 8 ns
    Factory Pack Quantity 3000 Subcategory MOSFETs
    Transistor Type TrenchFET Power MOSFET Typical Turn-Off Delay Time 25 ns
    Typical Turn-On Delay Time 15 ns Unit Weight 0.000705 oz

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    Availability: 7020 PCS

    +BOM
    Qty. Unit Price Ext. Price
    1+ $0.316 $0.32
    200+ $0.123 $24.60
    500+ $0.118 $59.00
    1000+ $0.116 $116.00

    The prices below are for reference only.

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