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SI2333CDS-T1-GE3 +BOM

Product Code: SI2333CDS-T1-GE3 - A surface mount power MOSFET with a P-channel configuration

Manufacturer:

Vishay
Mfr.Part #:

SI2333CDS-T1-GE3
Datasheet:

SI2333CDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2333CDS-T1-GE3

Email: [email protected]

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Tel: +852 95804164

SI2333CDS-T1-GE3 General Description

MOSFET, P-CH, 12V, 7.1A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):28.5mohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-7.1A; Power Dissipation Pd:2.5W; Voltage Vgs Max:8V

Key Features

TrenchFET® power MOSFET

Application

Load Switch |PA Switch

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	7.1 A	Rds On - Drain-Source Resistance	35 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	9 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	12 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	35 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	45 ns	Typical Turn-On Delay Time	13 ns
Width	1.6 mm	Part # Aliases	SI2333CDS-T1-BE3 SI2333CDS-GE3
Unit Weight	0.000282 oz