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SI1869DH-T1-E3 +BOM

This product is part of the Si1869DH Series, featuring a compact SC-70-6 package for easy installation and integration

Manufacturer:

Vishay
Mfr.Part #:

SI1869DH-T1-E3
Datasheet:

SI1869DH-T1-E3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for SI1869DH-T1-E3

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SI1869DH-T1-E3 General Description

The SI1869DH-T1-E3 is a P-channel MOSFET transistor manufactured by Vishay. It's designed for low voltage, high-speed switching applications in power management circuits. With a compact and efficient design, it offers a maximum drain-source voltage (VDS) of -30 volts, making it suitable for various electronic devices requiring power control at low voltages. Its low on-resistance (RDS(on)) ensures minimal power loss and high efficiency during operation.This transistor features a small footprint and is housed in a surface-mount DFN package, making it ideal for space-constrained applications. Its high-speed switching capability enables rapid response times in power management systems, enhancing overall performance.Furthermore, the SI1869DH-T1-E3 is RoHS compliant, ensuring environmental friendliness and regulatory compliance in electronic products. Its datasheet provides comprehensive details regarding electrical characteristics, thermal properties, and recommended operating conditions, facilitating easy integration into circuit designs

Key Features

The SI1869DH-T1-E3 is a MOSFET transistor by Vishay

It features a low on-resistance of typically 4

5 mΩ, a compact PowerPAK® SO-8 package, and a 30 V drain-source voltage rating

This device is suitable for various power management applications, offering efficiency and reliability in a small footprint

Application

The SI1869DH-T1-E3 is a MOSFET transistor suitable for various applications, including power management, DC-DC conversion, and load switching in portable electronics, automotive systems, and industrial equipment

Its low on-state resistance and high switching speed make it ideal for efficient power handling in diverse electronic devices

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	1.2 A	Rds On - Drain-Source Resistance	165 mOhms
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1 W	Channel Mode	Enhancement
Tradename	TrenchFET	Configuration	Dual
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Part # Aliases	SI1869DH-T1-BE3 SI1869DH-E3
Unit Weight	0.000265 oz