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See Technical Specifications

NVMFS5C442NWFAFT1G

Single N-Channel Power MOSFET 40V, 140A, 2.3mΩ

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NVMFS5C442NWFAFT1G
Datasheet:

NVMFS5C442NWFAFT1G Datasheet (PDF)
Series:

Automotive, AEC-Q101
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

40 V
EDA/CAD Models:

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NVMFS5C442NWFAFT1G General Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Key Features

Small Footprint (5x6 mm)
Low R_DS(on)
Low Q_G and Capacitance
NVMFS5C442NWF − Wettable Flank Option
AEC−Q101 Qualified and PPAP Capable
RoHS Compliant

Application

Reverse Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	29A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	2100 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	3.7W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NVMFS5	Product Category	MOSFET
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	140 A	Rds On - Drain-Source Resistance	1.9 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	32 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	83 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Configuration	Single	Fall Time	18 ns
Forward Transconductance - Min	92 S	Product Type	MOSFET
Rise Time	50 ns	Factory Pack Quantity	1500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	23 ns	Typical Turn-On Delay Time	11 ns
Unit Weight	0.026455 oz