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See Technical Specifications

NSS40300MZ4T1G

SMD PNP BJT for General Purpose Electronics

Manufacturer:

Onsemi
Mfr.Part #:

NSS40300MZ4T1G
Datasheet:

NSS40300MZ4T1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

0.0318
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for NSS40300MZ4T1G

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NSS40300MZ4T1G General Description

The combination of low saturation voltage and high gain makes this 3.0 A, 40 V Low V_CE(sat) PNP Power Bipolar Junction Transistor an ideal device for high speed switching applications where power saving is a concern.

Key Features

Low Collector-Emitter Saturation Voltage
High DC Current Gain
High Current-Gain Bandwidth Product
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
NSS40301MZ4 is NPN complimentary device
These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Application

Voltage regulation
Power management for portable devices
Switching regulator
Inductive load driver

Specifications

Status	Active	Compliance	PbAHP
Case Outline	0.0318	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	1000	ON Target	Y
Polarity	PNP	Type	Low VCE(sat)
VCE(sat) Max (V)	0.4	IC Cont. (A)	3
VCEO Min (V)	40	VCBO (V)	40
VEBO (V)	6	VBE(sat) (V)	1
VBE(on) (V)	0.9	hFE Min	175
hFE Max	350	PTM Max (W)	2
Pricing ($/Unit)	$0.1813Sample