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See Technical Specifications

NLAS4717EPMTR2G

Analog Switch, Dual SPDT, High Bandwidth, USB 1.1

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NLAS4717EPMTR2G
Datasheet:

NLAS4717EPMTR2G Datasheet (PDF)
Switch Circuit:

SPDT
Multiplexer/Demultiplexer Circuit:

2:1
Number of Circuits:

2
On-State Resistance (Max):

3.5Ohm
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NLAS4717EPMTR2G General Description

The NLAS4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw (SPDT) switch featuring low R_DS(on) of 4.5 ohms at 3.0 V.
The device also features guaranteed Break-Before-Make (BBM) switching, assuring the switches never short the driver.
The NLAS4717EP is available in two small size packages:
WQFN: 1.4 x 1.8 mm mm
Microbump: 2.0 x 1.5 mm

Key Features

Low R_DS(on): 4.5 Ω @ 3.0V
Matching Between the Switches ۪.5 Ω
Wide Voltage Range: 1.8 V to 5.5 V
High Bandwidth > 90 MHz
1.65 V to 5.5 V Operating Range
Low Threshold Voltages on Pins 4 and 8 (CTRL Pins)
Ultra-Low Charge Injection 𕟮.0 pC
Low Standby Current: I_CC=1.0nA (Max) @ T_A=25°C
*OVT on Pins 4 and 8 (CNTL Logic Pins)
These are Pb-Free Devices

Application

Cell Phones
PDAs
MP3s
Digital Still Cameras
USB 2.0 Full Speed (USB1.1) - 12 Mbps Compliant

Specifications

Category	Integrated Circuits (ICs)InterfaceAnalog Switches, Multiplexers, Demultiplexers	Series	-
Switch Circuit	SPDT	Multiplexer/Demultiplexer Circuit	2:1
Number of Circuits	2	On-State Resistance (Max)	3.5Ohm
Channel-to-Channel Matching (ΔRon)	100mOhm	Voltage - Supply, Single (V+)	1.8V ~ 5.5V
Voltage - Supply, Dual (V±)	-	Switch Time (Ton, Toff) (Max)	30ns, 40ns
-3db Bandwidth	90MHz	Charge Injection	9pC
Channel Capacitance (CS(off), CD(off))	15pF	Current - Leakage (IS(off)) (Max)	1nA
Crosstalk	-110dB @ 1MHz	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	NLAS4717