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NCV1413BDR2G

Darlington Transistor Array, High Voltage, High Current

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NCV1413BDR2G
Datasheet:

NCV1413BDR2G Datasheet (PDF)
Case Outline:

751B-05
MSL Temp (°C):

260
Container Type:

REEL
Configuration:

Array 7
EDA/CAD Models:

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NCV1413BDR2G General Description

The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps.

The MC1413, B with a 2.7 kΩ series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic.

Specifications

Status	Active	Case Outline	751B-05
MSL Temp (°C)	260	Container Type	REEL
Product Category	Darlington Transistors	Configuration	Array 7
Transistor Polarity	NPN	Collector- Emitter Voltage VCEO Max	50 V
Maximum DC Collector Current	500 mA	Mounting Style	SMD/SMT
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 125 C
Series	NCV1413	Qualification	AEC-Q101
DC Collector/Base Gain hfe Min	1000	Height	1.5 mm
Length	10 mm	Product Type	Darlington Transistors
Factory Pack Quantity	2500	Subcategory	Transistors
Width	4 mm	Unit Weight	0.023492 oz