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See Technical Specifications

K4W1G1646E-HC12 +BOM

DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96

Manufacturer:

SAMSUNG SEMICONDUCTOR INC
Mfr.Part #:

K4W1G1646E-HC12
Datasheet:

K4W1G1646E-HC12 Datasheet (PDF)
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8542.32.00.32
Access Time-Max:

0.225 ns
EDA/CAD Models:

Request Free CAD Models for K4W1G1646E-HC12

Email: [email protected]

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Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable K4W1G1646E-HC12 driver, produced by SAMSUNG SEMICONDUCTOR INC. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the K4W1G1646E-HC12.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Part Life Cycle Code	Obsolete	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8542.32.00.32
Access Time-Max	0.225 ns	Clock Frequency-Max (fCLK)	800 MHz
I/O Type	COMMON	Interleaved Burst Length	4,8
JESD-30 Code	R-PBGA-B96	Memory Density	1073741824 bit
Memory IC Type	DDR3 DRAM	Memory Width	16
Number of Terminals	96	Number of Words	67108864 words
Number of Words Code	64000000	Organization	64MX16
Output Characteristics	3-STATE	Peak Reflow Temperature (Cel)	260
Power Supplies	1.5 V	Qualification Status	Not Qualified
Refresh Cycles	8192	Sequential Burst Length	4,8
Standby Current-Max	0.01 A	Supply Current-Max	0.29 mA
Supply Voltage-Nom (Vsup)	1.5 V	Surface Mount	YES
Technology	CMOS	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM