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See Technical Specifications

IXFN130N30

N-Channel 300 V 130A (Tc) 700W (Tc) Chassis Mount SOT-227B

Manufacturer:

IXYS
Mfr.Part #:

IXFN130N30
Datasheet:

IXFN130N30 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

4
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for IXFN130N30

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXFN130N30 General Description

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.

Key Features

International Standard Packages
High Current Handling Capability
Low R
DS(on)
HDMOS process
Avalanche Rated
Low Package Inductance
Fast intrinsic diode

Application

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC Motor Drives
Temperature and Lighting Controls
Advantages:
Easy to mount
Space savings
High power density

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	4	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	4000 mJ	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	300 V
Drain Current-Max (ID)	130 A	Drain-source On Resistance-Max	0.022 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PUFM-X4
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	700 W
Pulsed Drain Current-Max (IDM)	520 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	NICKEL
Terminal Form	UNSPECIFIED	Terminal Position	UPPER
Transistor Application	SWITCHING	Transistor Element Material	SILICON