This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IRLU3110ZPbF

N-Channel 100 V 42A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IRLU3110ZPbF
Datasheet:

IRLU3110ZPbF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

100 V
EDA/CAD Models:

Request Free CAD Models for IRLU3110ZPbF

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRLU3110ZPbF General Description

The IRLU3110ZPbF is a power MOSFET designed for high-speed switching applications. MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are popular semiconductor devices used for power switching and amplification.

Infineon Technologies Corporation Inventory

Key Features

Power MOSFET: The IRLU3110ZPbF is a N-channel enhancement-mode MOSFET, allowing for high-performance power switching.
Low On-Resistance: It has a low on-resistance (RDS(on)) of typically 0.04 ohms, which helps to minimize power losses and improve overall efficiency.
High Current Capability: The MOSFET is capable of handling a continuous drain current (ID) of up to 46A, making it suitable for high-power applications.
Avalanche Rated: It is avalanche-rated, which means it can withstand high-energy transient events without being damaged.
Logic-Level Gate Drive: The IRLU3110ZPbF has a low gate threshold voltage, enabling it to be easily controlled by logic-level signals.
TO-251 (DPak) Package: It is available in a TO-251 (also known as DPak) surface-mount package, which offers good thermal dissipation and ease of mounting.

Infineon Technologies Corporation Original Stock

Application

Power Conversion
Switching Circuits
Automotive Electronics
Power Distribution Systems

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	HEXFET®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs	48 nC @ 4.5 V
Vgs (Max)	±16V	Input Capacitance (Ciss) (Max) @ Vds	3980 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	140W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IRLU3110