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See Technical Specifications

IRLB8721PbF

MOSFET MOSFT 30V 62A 9mOhm 8nC Qg

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IRLB8721PbF
Datasheet:

IRLB8721PbF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

30 V
EDA/CAD Models:

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IRLB8721PbF General Description

The IRLB8721PbF is a power MOSFET designed and manufactured by Infineon Technologies. It is an N-channel MOSFET that is commonly used in various power switching applications.

Key Features

Type: N-channel MOSFET
Voltage Rating: 30V
Continuous Drain Current (ID): 62A
RDS(on) (Static Drain-Source On-Resistance): 8.7mΩ (maximum) at VGS = 10V
Gate-Source Voltage (VGS) Range: ±20V
Package: TO-220AB
RoHS compliant

Application

Some typical applications of the IRLB8721PbF MOSFET include power supplies, motor control, DC-DC converters, LED lighting, and other high-current switching applications.

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	HEXFET®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	8.7mOhm @ 31A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25µA	Gate Charge (Qg) (Max) @ Vgs	13 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1077 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	65W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IRLB8721