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IRLB3036PBF +BOM

N-Channel 60 V 195A (Tc) 380W (Tc) Through Hole TO-220AB

IRLB3036PBF Information

Description

The Introduction: IRLB3036PBF is a N-channel MOSFET transistor from Infineon Technologies, designed for high-power switching applications. It boasts excellent efficiency with its low RDS(on) and can handle up to 270A of continuous drain current at 60V. This TO-220AB-packaged device is RoHS compliant and features logic-level gate drive. With a power dissipation rating of 370W, it's well-suited for various applications like power supplies, motor control, UPS systems, solar inverters, LED lighting, industrial automation, electric vehicles, battery management systems, and welding equipment.

Features

The IRLB3036PBF features:

  • 150V Drain-to-Source Voltage Rating
  • 195A Continuous Drain Current
  • 370W Power Dissipation
  • Low RDS(on) for improved efficiency
  • Logic Level Gate Drive
  • Fully RoHS compliant
  • TO-220 Package for easy mounting

Package

According to the product information, the package type of IRLB3036PBF is TO-220AB.

Pinout

The IRLB3036PBF is a N-channel MOSFET transistor with a TO-220AB package. It has 3 pins:

  • Drain (D): This pin connects to the positive terminal of the power source.
  • Source (S): This pin connects to the negative terminal of the power source or the load.
  • Gate (G): This pin is used for control and switching.

The IRLB3036PBF is designed for high-power switching applications, such as motor control, power supplies, and solar inverters. Its key features include a 150V drain-to-source voltage rating, 195A continuous drain current, and 370W power dissipation.

Manufacturer

The manufacturer of the IRLB3036PBF is Infineon Technologies, a German-based semiconductor company that specializes in power semiconductors, microcontrollers, and other electronic components.

Applications

The IRLB3036PBF MOSFET transistor has a wide range of application areas, including power supplies, motor control, UPS systems, solar inverters, LED lighting, industrial automation, high-power switching applications, electric vehicles, battery management systems, and welding equipment. Its high current rating and low RDS(on) make it suitable for demanding applications that require efficient power conversion.

Equivalent

The equivalent products of IRLB3036PBF are:

  • STP16NF60L (STMicroelectronics)
  • FET101N60E (Fairchild Semiconductor)
  • IPW65R120C7 (Infineon Technologies)

These MOSFETs have similar specifications and applications as the IRLB3036PBF.

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 165A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 4.5 V Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 11210 pF @ 50 V FET Feature -
Power Dissipation (Max) 380W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Base Product Number IRLB3036
RHoS yes PBFree yes
HalogenFree yes Package/Case TO-220

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Ratings and Reviews

More
N
N**o 04/28/2023

That's what i asked for. i'm fast.

13
O
O**a 04/10/2023

The quility of the product is good, fast delivered .One of the joysticks is little bit rusted but it doesnt matter for working.I reccomend this seller .

10
A
A**n 03/28/2023

thank you.product good.Delivery is normal.

10

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IRLB3036PBF Datasheet PDF

Preliminary Specification IRLB3036PBF PDF Download

IRLB3036PBF PDF Preview

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